Description
The Samsung 990 EVO Plus is a powerful internal solid state drive designed to enhance storage performance with a 2 TB capacity. Featuring Samsung V-NAND TLC Technology, this drive ensures high-speed data transfer with an internal data rate of 7250 MBps and a write speed of 6300 MBps, enabling seamless operation for demanding applications and large file management. With support for PCI Express 4.0 and 5.0 interfaces, it meets various system requirements while offering speed and reliability.
Designed with advanced features such as Intelligent TurboWrite Technology and an Auto Garbage Collection Algorithm, the Samsung 990 EVO Plus maintains efficiency and durability even under heavy workloads. Its shock and vibration resistance capability of up to 1500 g and a temperature range from -40°C to 85°C makes it suitable for both consumer and professional environments. This SSD ensures quick data access and provides hardware encryption for enhanced security, making it an ideal choice for users looking to upgrade system performance.
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Efficient data transfer
With internal data rates reaching up to 7250 MBps, data can be transferred swiftly, enabling faster boot times and quicker application load speeds. -
High durability
Featuring a shock resistance of up to 1500 g and a vibration tolerance, this drive is rugged enough to withstand physical stress, ensuring reliable operation in various environments. -
Advanced performance management
Supports TRIM, Auto Garbage Collection, and Device Sleep to optimize performance and extend the lifespan of the drive, making it suitable for both everyday use and demanding applications. -
Enhanced security features
Equipped with 256-bit AES hardware encryption and TCG Opal Encryption 2.0, the drive provides robust security measures to protect sensitive data from unauthorized access.
Specifications
Summary
- Product Description
- Samsung 990 EVO Plus MZ-V9S2T0 - SSD - 2 TB - PCIe 5.0 x2 (NVMe)
- Type
- Solid state drive - internal
- Capacity
- 2 TB
- Hardware Encryption
- Yes
- Encryption Algorithm
- 256-bit AES
- NAND Flash Memory Type
- Triple-level cell (TLC)
- Form Factor
- M.2 2280
- Interface
- PCIe 5.0 x2 (NVMe)
- Features
- Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
- Dimensions (WxDxH)
- 22.15 mm x 80.15 mm x 2.38 mm
- Weight
- 9 g
- Manufacturer Warranty
- 5-year warranty
Detailed Specification
General
- Device Type
- Solid state drive - internal
- Capacity
- 2 TB
- Hardware Encryption
- Yes
- Encryption Algorithm
- 256-bit AES
- NAND Flash Memory Type
- Triple-level cell (TLC)
- Form Factor
- M.2 2280
- Interface
- PCIe 5.0 x2 (NVMe)
- Features
- Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
- Width
- 22.15 mm
- Depth
- 80.15 mm
- Height
- 2.38 mm
- Weight
- 9 g
Performance
- Internal Data Rate
- 7250 MBps (read) / 6300 MBps (write)
- Maximum 4KB Random Write
- 1350000 IOPS
- Maximum 4KB Random Read
- 1000000 IOPS
Reliability
- MTBF
- 1.500.000 hours
Expansion & Connectivity
- Compatible Bay
- M.2 2280
Power
- Power Consumption
- 4.6 watt (read) , 4.2 watt (write) , 60 mW (standby) , 5 mW (sleep)
Software & System Requirements
- Software Included
- Samsung Magician Software
Miscellaneous
- Enclosure Material
- Nickel coating
Manufacturer Warranty
- Service & Support
- Limited warranty - 5 years / 1200 TBW
Environmental Parameters
- Min Operating Temperature
- 0 °C
- Max Operating Temperature
- 70 °C
- Shock Tolerance (non-operating)
- 1500 g @ 0.5 ms
- Vibration Tolerance (non-operating)
- 20 g @ 20-2000 Hz
