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Samsung SSD INT 990 EVO PLUS 1TB PCIE M.2

Samsung SSD INT 990 EVO PLUS 1TB PCIE M.2

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Quicklinx: HXZ4WS00 Mfr#: MZ-V9S1T0BW
Form Factor: M.2 2280
Type: Solid state drive
Capacity: 1TB, 1TB
18 In Stock
£225.87 ex VAT
£271.04 inc VAT
Qty
Standard delivery Delivered within 3 working days

Description

The Samsung 990 EVO Plus is an internal solid state drive designed for demanding applications. With a robust capacity of 1 TB, it ensures ample storage for a variety of files and applications. The drive utilizes PCI Express 5.0 and boasts internal data rates of up to 7150 MBps, allowing for quick data retrieval and minimal load times. Samsung’s V-NAND TLC Technology enhances performance and endurance, making it suitable for both everyday computing and intensive tasks. This drive is engineered to withstand a range of environmental conditions, operating effectively in temperatures from 0°C to 70°C and withstanding storage temperatures as low as -40°C and as high as 85°C. It features TRIM support and an Auto Garbage Collection Algorithm, ensuring optimal performance over time. Security is prioritized with hardware encryption and compliance with TCG Opal Encryption 2.0, safeguarding data against unauthorized access.

Specifications

Summary

Product Description
Samsung 990 EVO Plus MZ-V9S1T0 - SSD - 1 TB - PCIe 5.0 x2 (NVMe)
Type
Solid state drive - internal
Capacity
1 TB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Triple-level cell (TLC)
Form Factor
M.2 2280
Interface
PCIe 5.0 x2 (NVMe)
Features
Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
Dimensions (WxDxH)
22.15 mm x 80.15 mm x 2.38 mm
Weight
9 g
Manufacturer Warranty
5-year warranty


Detailed Specification

General

Device Type
Solid state drive - internal
Capacity
1 TB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Triple-level cell (TLC)
Form Factor
M.2 2280
Interface
PCIe 5.0 x2 (NVMe)
Features
Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
Width
22.15 mm
Depth
80.15 mm
Height
2.38 mm
Weight
9 g

Performance

Internal Data Rate
7150 MBps (read) / 6300 MBps (write)
Maximum 4KB Random Write
1350000 IOPS
Maximum 4KB Random Read
850000 IOPS

Reliability

MTBF
1.500.000 hours

Expansion & Connectivity

Compatible Bay
M.2 2280

Power

Power Consumption
4.3 watt (read) , 4.2 watt (write) , 60 mW (standby) , 5 mW (sleep)

Software & System Requirements

Software Included
Samsung Magician Software

Miscellaneous

Enclosure Material
Nickel coating

Manufacturer Warranty

Service & Support
Limited warranty - 5 years / 600 TBW

Environmental Parameters

Min Operating Temperature
0 °C
Max Operating Temperature
70 °C
Shock Tolerance (non-operating)
1500 g @ 0.5 ms
Vibration Tolerance (non-operating)
20 g @ 20-2000 Hz

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Form Factor: M.2 2280
Type: Solid state drive
Capacity: 1TB
Capacity: 1TB
Brand: Samsung
Price Range Ex VAT: £150 - £300
Stock Status: In Stock
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