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Enhanced durability
With an MTBF of 1,500,000 hours and a robust shock acceleration tolerance of 1500 g for non-operating conditions, this solid state drive offers exceptional durability and reliability for long-term use. -
High-speed performance
Boasting an impressive internal data rate of up to 7450 MBps for reading and 6900 MBps for writing, alongside maximum 4KB random reads of 1600000 IOPS and writes of 1550000 IOPS, the Samsung 990 PRO ensures swift data access and transfer speeds. -
Advanced security
Equipped with 256-bit AES hardware encryption and TCG Opal Encryption 2.0, this drive provides advanced security features to protect your data from unauthorized access. -
Efficient power management
Featuring a low average power consumption of 6.5 W and an idle mode requiring only 55 mW, the Samsung 990 PRO is designed for efficient energy use without sacrificing performance. -
Innovative technology
Incorporating Samsung V-NAND TLC Technology, Garbage Collection technology, and Device Sleep support, this SSD offers enhanced efficiency, reliability, and a high-capacity 4 TB storage with a 4 GB Low Power DDR4 SDRAM Cache for optimal performance.
Specifications
Summary
- Product Description
- Samsung 990 PRO MZ-V9P4T0GW - SSD - 4 TB - PCIe 4.0 x4 (NVMe)
- Type
- Solid state drive - internal
- Capacity
- 4 TB
- Integrated Heatsink
- Yes
- Hardware Encryption
- Yes
- Encryption Algorithm
- 256-bit AES
- Form Factor
- M.2 2280
- Interface
- PCIe 4.0 x4 (NVMe)
- Features
- TRIM support, Garbage Collection technology, Device Sleep support, Samsung V-NAND TLC Technology, 4 GB Low Power DDR4 SDRAM Cache, S.M.A.R.T.
- Dimensions (WxDxH)
- 25 mm x 80.15 mm x 8.88 mm
- Weight
- 28 g
- Manufacturer Warranty
- 5-year warranty
Detailed Specification
General
- Device Type
- Solid state drive - internal
- Capacity
- 4 TB
- Hardware Encryption
- Yes
- Encryption Algorithm
- 256-bit AES
- Integrated Heatsink
- Yes
- Form Factor
- M.2 2280
- Interface
- PCIe 4.0 x4 (NVMe)
- Features
- TRIM support, Garbage Collection technology, Device Sleep support, Samsung V-NAND TLC Technology, 4 GB Low Power DDR4 SDRAM Cache, S.M.A.R.T.
- Width
- 25 mm
- Depth
- 80.15 mm
- Height
- 8.88 mm
- Weight
- 28 g
Performance
- Internal Data Rate
- 7450 MBps (read) / 6900 MBps (write)
- Maximum 4KB Random Write
- 1550000 IOPS
- Maximum 4KB Random Read
- 1600000 IOPS
Reliability
- MTBF
- 1,500,000 hours
Expansion & Connectivity
- Interfaces
- PCI Express 4.0 x4 (NVMe)
- Compatible Bay
- M.2 2280
Power
- Power Consumption
- 6.5 Watt (average) , 55 mW (idle)
Software & System Requirements
- Software Included
- Samsung Magician Software
Miscellaneous
- Compliant Standards
- IEEE 1667
Manufacturer Warranty
- Service & Support
- Limited warranty - 5 years / 2400 TBW
Environmental Parameters
- Min Operating Temperature
- 0 °C
- Max Operating Temperature
- 70 °C
- Shock Tolerance (non-operating)
- 1500 g
