Description
Packed with a deep feature set, this Intel 3D NAND SSD for data centers is optimized for the data caching needs of cloud storage and software-defined infrastructures. Modernizes the data center with a combination of performance, capacity, manageability, and reliability.
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Designed for data caching
Optimized for cloud storage architectures, the Intel SSD DC P4600 Series significantly increases server agility and utilization, while also accelerating applications, across a wide range of cloud workloads. -
Optimized for storage efficiency
Intel 3D NAND SSDs for the data center reduce the need for specialized servers, increase technician efficiency and lessen Opex and Capex, enabling organizations to squeeze every last bit and byte from the data center. -
Outstanding quality and reliability
With industry-leading quality and reliability, you can be confident your drives are available and your data is protected. Support for data-at-rest encryption minimizes the likelihood of data breaches, while end-to-end data protection reduces the chance of silent data errors. -
Advanced manageability and serviceability
Built with advanced manageability features such as NVMe -MI, the Intel SSD DC P4600 Series allows you to remotely monitor, manage and remediate across more device states and streamline essential services.
Specifications
Summary
- Product Description
- Intel Solid-State Drive DC P4600 Series - SSD - 2 TB - PCIe 3.1 x4 (NVMe)
- Type
- Solid state drive - internal
- Capacity
- 2 TB
- Hardware Encryption
- Yes
- Encryption Algorithm
- 256-bit AES
- NAND Flash Memory Type
- 3D triple-level cell (TLC)
- Form Factor
- 2.5"
- Interface
- PCIe 3.1 x4 (NVMe)
- Features
- High Endurance Technology (HET), Temperature Monitoring and Logging, Enhanced Power Loss Data Protection, End-to-end data protection
- Dimensions (WxDxH)
- 15 mm
- Manufacturer Warranty
- 5-year warranty
Detailed Specification
General
- Device Type
- Solid state drive - internal
- Capacity
- 2 TB
- Hardware Encryption
- Yes
- Encryption Algorithm
- 256-bit AES
- NAND Flash Memory Type
- 3D triple-level cell (TLC)
- Form Factor
- 2.5"
- Interface
- PCIe 3.1 x4 (NVMe)
- Features
- High Endurance Technology (HET), Temperature Monitoring and Logging, Enhanced Power Loss Data Protection, End-to-end data protection
- Height
- 15 mm
Performance
- Internal Data Rate
- 3290 MBps (read) / 1650 MBps (write)
- 4KB Random Read
- 650000 IOPS
- 4KB Random Write
- 205000 IOPS
- Average Latency
- 34 µs
Reliability
- MTBF
- 2,000,000 hours
- Non-Recoverable Errors
- 1 per 10^17
Expansion & Connectivity
- Interfaces
- 1 x PCI Express 3.1 x4 (NVMe)
- Compatible Bay
- 2.5"
Power
- Power Consumption
- 15.83 Watt (write) , 8.67 Watt (read) , 5 Watt (idle)
Manufacturer Warranty
- Service & Support
- Limited warranty - 5 years
Environmental Parameters
- Min Operating Temperature
- 0 °C
- Max Operating Temperature
- 70 °C
- Shock Tolerance (operating)
- 1000 g @ 0.5 ms
- Shock Tolerance (non-operating)
- 1000 g @ 0.5 ms
- Vibration Tolerance (operating)
- 2.17 g
- Vibration Tolerance (non-operating)
- 3.13 g
